Publication Information

Title:
Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 11, PP. 1379-1382, 2016
Date:
2016-09-27

Author Information

Name Institution
Yi-He TsaiNational Chiao Tung University
Chen-Han ChouNational Chiao Tung University
An-Shih ShihNational Chiao Tung University
Yu-Hau JauNational United University
Wen-Kuan YehNational Nano Device Labs
Yu-Hsien LinNational United University
Fu-Hsiang KoNational Chiao Tung University
Chao-Hsin ChienNational Chiao Tung University

Films


Plasma Al2O3


Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

GeO2
Al2O3

Keywords

Notes

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