Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN

Type:
Journal
Info:
Adv. Funct. Mater. 2021, 2101441
Date:
2021-04-13
DOI:
https://doi.org/10.1002/adfm.202101441

Author Information

Name Institution
Alex HenningTechnical University of Munich
Johannes D. BartlTechnical University of Munich
Andreas ZeidlerTechnical University of Munich
Simon QianTechnical University of Munich
Oliver BienekTechnical University of Munich
Chang-Ming JiangTechnical University of Munich
Claudia PaulusTechnical University of Munich
Bernhard RiegerTechnical University of Munich
Martin StutzmannTechnical University of Munich
Ian D. SharpTechnical University of Munich

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 280C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Axis Supra

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Digital Instruments Nanoscope Multimode V

Characteristic: Work Function
Analysis: Kelvin Probe (SPV) Surface PhotoVoltage Measurements
Diagnostic: Custom

Characteristic: Band Bending
Analysis: Kelvin Probe (SPV) Surface PhotoVoltage Measurements
Diagnostic: Custom

Substrates

GaN

Notes

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