The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Crystal Growth Vol.335(1):51-57.
Date:
2011-11-15

Author Information

Name Institution
Mustafa AlevliBilkent University
Çağla ÖzgitBilkent University
İnci DönmezBilkent University
Necmi BiyikliBilkent University

Films

Plasma AlN


Plasma AlN


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Microstructure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Optical Properties
Analysis: Optical Transmission

Characteristic: Optical Properties
Analysis: Optical Absorption

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Phonon Modes
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XRR, X-Ray Reflectivity

Substrates

Si(100)
Si(111)
Sapphire
Quartz

Keywords

AlN
PEALD Film Development
Optical

Notes

Ultratech Fiji PEALD AlN film development.
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