
The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Crystal Growth Vol.335(1):51-57.
Date:
2011-11-15
Author Information
Name | Institution |
---|---|
Mustafa Alevli | Bilkent University |
Çağla Özgit | Bilkent University |
İnci Dönmez | Bilkent University |
Necmi Biyikli | Bilkent University |
Films
Plasma AlN
Plasma AlN
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Microstructure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Optical Properties
Analysis: Optical Transmission
Characteristic: Optical Properties
Analysis: Optical Absorption
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Phonon Modes
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XRR, X-Ray Reflectivity
Substrates
Si(100) |
Si(111) |
Sapphire |
Quartz |
Notes
Ultratech Fiji PEALD AlN film development. |
156 |