Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods

Type:
Journal
Info:
Vacuum, Volume 193, 2021, Pages 110533
Date:
2021-08-15
DOI:
https://doi.org/10.1016/j.vacuum.2021.110533

Author Information

Name Institution
Rashid DallaevBrno University of Technology

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
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N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range = 100-350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension ICON

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: ION TOF TofSIMS 5

Characteristic: Chemical Composition, Impurities
Analysis: NRA, Nuclear Reaction Analysis
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Substrates

LSAT (LaAlO3)0.3(Sr2TaAlO6)0.7
SiC
Silicon

Notes

1662