Publication Information

Title:
Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
Type:
Journal
Info:
J. Vac. Sci. Technol. A 35(1), Jan/Feb 2017
Date:
2016-11-22

Author Information

Name Institution
Daigo KikutaToyota Central Research and Development Laboratories
Kenji ItohToyota Central Research and Development Laboratories
Tetsuo NaritaToyota Central Research and Development Laboratories
Tomohiko MoriToyota Central Research and Development Laboratories

Films

Plasma Al2O3



Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: EPMA, Electron Probe Micro Analyzer

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Conduction Band Offset
Analysis: HAXPES, Hard X-Ray Photoelectron Spectroscopy

Characteristic: Breakdown Voltage Lifetime
Analysis: TDDB, Time Dependent Dielectric Breakdown

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Substrates

GaN

Keywords

Nanolaminate

Notes

1159