Publication Information

Title: Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device

Type: Journal

Info: J. Vac. Sci. Technol. A 35(1), Jan/Feb 2017

Date: 2016-11-22

DOI: http://dx.doi.org/10.1116/1.4971399

Author Information

Name

Institution

Toyota Central Research and Development Laboratories

Toyota Central Research and Development Laboratories

Toyota Central Research and Development Laboratories

Toyota Central Research and Development Laboratories

Films

Deposition Temperature = 250C

75-24-1

7782-44-7

Deposition Temperature = 250C

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

EPMA, Electron Probe Micro Analyzer

-

Thickness

XRR, X-Ray Reflectivity

-

Conduction Band Offset

HAXPES, Hard X-Ray Photoelectron Spectroscopy

-

Breakdown Voltage Lifetime

TDDB, Time Dependent Dielectric Breakdown

-

Capacitance

C-V, Capacitance-Voltage Measurements

-

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

-

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

-

Interface Trap Density

C-V, Capacitance-Voltage Measurements

-

Leakage Current

I-V, Current-Voltage Measurements

-

Breakdown Voltage

I-V, Current-Voltage Measurements

-

Substrates

GaN

Keywords

Nanolaminate

Notes

1159



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