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Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
Type:
Journal
Info:
J. Vac. Sci. Technol. A 35(1), Jan/Feb 2017
Date:
2016-11-22
Author Information
| Name | Institution |
|---|---|
| Daigo Kikuta | Toyota Central Research and Development Laboratories |
| Kenji Itoh | Toyota Central Research and Development Laboratories |
| Tetsuo Narita | Toyota Central Research and Development Laboratories |
| Tomohiko Mori | Toyota Central Research and Development Laboratories |
Films
Plasma Al2O3
Plasma SiO2
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: EPMA, Electron Probe Micro Analyzer
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Conduction Band Offset
Analysis: HAXPES, Hard X-Ray Photoelectron Spectroscopy
Characteristic: Breakdown Voltage Lifetime
Analysis: TDDB, Time Dependent Dielectric Breakdown
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| GaN |
Notes
| 1159 |