Publication Information

Title: Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device

Type: Journal

Info: J. Vac. Sci. Technol. A 35(1), Jan/Feb 2017

Date: 2016-11-22

DOI: http://dx.doi.org/10.1116/1.4971399

Author Information

Name

Institution

Toyota Central Research and Development Laboratories

Toyota Central Research and Development Laboratories

Toyota Central Research and Development Laboratories

Toyota Central Research and Development Laboratories

Films

Deposition Temperature = 250C

75-24-1

7782-44-7

Deposition Temperature = 250C

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

EPMA, Electron Probe Micro Analyzer

Unknown

Thickness

XRR, X-Ray Reflectivity

Unknown

Conduction Band Offset

HAXPES, Hard X-Ray Photoelectron Spectroscopy

Unknown

Breakdown Voltage Lifetime

TDDB, Time Dependent Dielectric Breakdown

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Unknown

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Breakdown Voltage

I-V, Current-Voltage Measurements

Unknown

Substrates

GaN

Keywords

Nanolaminate

Notes

1159



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