An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon

Type:
Journal
Info:
Microelectronic Engineering 162 (2016) 40 - 44
Date:
2016-05-08
DOI:
http://dx.doi.org/10.1016/j.mee.2016.05.001

Author Information

Name Institution
A. TalneauCNRS - LPN
K. PantzasCNRS - LPN
A. DurnezCNRS - LPN
G. PatriarcheCNRS - LPN
D. AlamarguyGeePs Group of electrical engineering - Paris
E. Le BourhisCNRS - Univ de Poitiers

Films

Plasma SiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Silicon

Notes

828