Publication Information

Title:
An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon
Type:
Journal
Info:
Microelectronic Engineering 162 (2016) 40 - 44
Date:
2016-05-08

Author Information

Name Institution
A. TalneauCNRS - LPN
K. PantzasCNRS - LPN
A. DurnezCNRS - LPN
G. PatriarcheCNRS - LPN
D. AlamarguyGeePs Group of electrical engineering - Paris
E. Le BourhisCNRS - Univ de Poitiers

Films


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Silicon

Keywords

Notes

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