Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode

Type:
Journal
Info:
RSC Adv., 2017, 7, 46201-46207
Date:
2017-09-11
DOI:
http://dx.doi.org/10.1039/C7RA07259G

Author Information

Name Institution
Sushil Kumar PandeyUniversity of Minnesota
Nezhueyotl IzquierdoUniversity of Minnesota
Rick LiptakRose-Hulman Institute of Technology
Stephen A. CampbellUniversity of Minnesota

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
Deposition Temperature Range N/A

Plasma SiNx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Stress
Analysis: Wafer Curvature
Diagnostic: -

Substrates

AZO - Al:ZnO
Black Phosphorus

Notes

1044