About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays

Type:
Journal
Info:
Phys. Chem. Chem. Phys., 2012, 14, 4614-4619
Date:
2012-01-24
DOI:
http://dx.doi.org/10.1039/c2cp40238f

Author Information

Name Institution
Vinayak S. KaleNanyang Technological University
Rajiv Ramanujam PrabhakarNanyang Technological University
Stevin S. PramanaNanyang Technological University
Manohar RaoNanyang Technological University
Chorng-Haur SowNational University Singapore
K. B. JineshNanyang Technological University
Subodh G. MhaisalkarNanyang Technological University

Films

Plasma ZnO

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Electron Field Emission
Analysis: -
Diagnostic: -

Characteristic: Threshold Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Asylum Research MFP-3D

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7600F

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100F

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Asylum Research MFP-3D

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: -

Substrates

Silicon

Notes

129