Publication Information

Title: Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition

Type: Conference Proceedings

Info: Proc. SPIE 9491, Sensors for Extreme Harsh Environments II, 949105 (May 13, 2015)

Date: 2015-05-13

DOI: http://dx.doi.org/10.1117/12.2179129

Author Information

Name

Institution

Stanford University

Stanford University

Stanford University

Stanford University

Films

Deposition Temperature = 250C

75-24-1

7782-44-7

Deposition Temperature = 250C

19962-11-9

7782-44-7

Deposition Temperature = 250C

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Hysteresis

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Fixed Charge

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Mobile Charge Density

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Thickness

Ellipsometry

J.A. Woollam M-2000

Images

SEM, Scanning Electron Microscopy

-

Radiation Hardness

Radiation Chamber

JL Shepherd and Associates, Model 484

Substrates

Silicon

Keywords

Radiation Hardness

Notes

Ultratech Fiji PEALD Al2O3, HfO2, and SiO2 radiation hardness study.

316



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