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Publication Information

Title: Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition

Type: Conference Proceedings

Info: Proc. SPIE 9491, Sensors for Extreme Harsh Environments II, 949105 (May 13, 2015)

Date: 2015-05-13

DOI: http://dx.doi.org/10.1117/12.2179129

Author Information

Name

Institution

Stanford University

Stanford University

Stanford University

Stanford University

Films

Deposition Temperature = 250C

75-24-1

7782-44-7

Deposition Temperature = 250C

19962-11-9

7782-44-7

Deposition Temperature = 250C

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Hysteresis

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Fixed Charge

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Mobile Charge Density

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Thickness

Ellipsometry

J.A. Woollam M-2000

Images

SEM, Scanning Electron Microscopy

Unknown

Radiation Hardness

Radiation Chamber

JL Shepherd and Associates, Model 484

Substrates

Silicon

Keywords

Radiation Hardness

Notes

Ultratech Fiji PEALD Al2O3, HfO2, and SiO2 radiation hardness study.

316


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