Publication Information

Title:
Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
Type:
Conference Proceedings
Info:
Proc. SPIE 9491, Sensors for Extreme Harsh Environments II, 949105 (May 13, 2015)
Date:
2015-05-13

Author Information

Name Institution
Ateeq J. SuriaStanford University
Heather C. ChiamoriStanford University
Ashwin ShankarStanford University
Debbie G. SeneskyStanford University

Films

Plasma Al2O3




Film/Plasma Properties

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Mobile Charge Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Radiation Hardness
Analysis: Radiation Chamber

Substrates

Silicon

Keywords

Radiation Hardness

Notes

Ultratech Fiji PEALD Al2O3, HfO2, and SiO2 radiation hardness study.
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