Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
Type:
Conference Proceedings
Info:
Proc. SPIE 9491, Sensors for Extreme Harsh Environments II, 949105 (May 13, 2015)
Date:
2015-05-13
Author Information
| Name | Institution |
|---|---|
| Ateeq J. Suria | Stanford University |
| Heather C. Chiamori | Stanford University |
| Ashwin Shankar | Stanford University |
| Debbie G. Senesky | Stanford University |
Films
Plasma Al2O3
Plasma HfO2
Plasma SiO2
Film/Plasma Properties
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Mobile Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Radiation Hardness
Analysis: Radiation Chamber
Substrates
| Silicon |
Notes
| Ultratech Fiji PEALD Al2O3, HfO2, and SiO2 radiation hardness study. |
| 316 |