Publication Information

Title: AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD

Type: Conference Proceedings

Info: 224th ECS Meeting, Oct 2013, San Francisco, United States. pp.269-27.

Date: 2014-08-05

DOI: http://dx.doi.org/10.1149/05804.0269ecst

Author Information

Name

Institution

CEA - LETI MINATEC

Films

Deposition Temperature Range N/A

75-24-1

7732-18-5

Deposition Temperature Range N/A

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

206



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