Publication Information

Title:
AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
Type:
Conference Proceedings
Info:
224th ECS Meeting, Oct 2013, San Francisco, United States. pp.269-27.
Date:
2014-08-05

Author Information

Name Institution
Richard MeunierCEA - LETI MINATEC

Films

Thermal Al2O3


Plasma Al2O3


Film/Plasma Properties

Substrates

Keywords

Notes

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