Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures

Type:
Journal
Info:
Phys. Rev. B 96, 115435, 2017
Date:
2017-09-17
DOI:
http://dx.doi.org/10.1103/PhysRevB.96.115435

Author Information

Name Institution
L. Fry-BouriauxUniversity of Leeds
M. C. RosamondUniversity of Leeds
D. A. WilliamsHitachi Cambridge Laboratory
A. G. DaviesUniversity of Leeds
C. WaltiUniversity of Leeds

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Current Density
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Substrates

SiO2
Au
Cr

Notes

1118