Publication Information

Title: Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid

Type: Journal

Info: ACS Appl. Mater. Interfaces, 2016, 8 (27), pp 17599-17605

Date: 2016-06-13

DOI: http://dx.doi.org/10.1021/acsami.6b03194

Author Information

Name

Institution

Stanford University

Stanford University

Stanford University

Stanford University

Stanford University

Stanford University

Stanford University

Stanford University

Samsung Electronics Co.

Stanford University

Films

Deposition Temperature = 350C

15112-89-7

7727-37-9

1333-74-0

Deposition Temperature = 350C

75-24-1

7727-37-9

1333-74-0

Deposition Temperature = 350C

15112-89-7

75-24-1

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000

Etch Rate

Wet Etch

Custom

Density

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MPD X-ray Diffractometer

Thickness

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MPD X-ray Diffractometer

Morphology, Roughness, Topography

TEM, Transmission Electron Microscope

FEI Titan S 80-300 TEM/STEM

Microstructure

TEM, Transmission Electron Microscope

FEI Titan S 80-300 TEM/STEM

Images

TEM, Transmission Electron Microscope

FEI Nova 600i Nanolab

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Agilent 5500

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

PHI VersaProbe 5000

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent E4980A Precision LCR Meter

Leakage Current

I-V, Current-Voltage Measurements

Keithley 2636A Source Meter

Substrates

SiO2

Quartz

Keywords

Plasma vs Thermal Comparison

Notes

886



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