Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2016, 8 (27), pp 17599-17605
Date:
2016-06-13
Author Information
| Name | Institution |
|---|---|
| Yongmin Kim | Stanford University |
| J Provine | Stanford University |
| Steve P. Walch | Stanford University |
| Joonsuk Park | Stanford University |
| Witchukorn Phuthong | Stanford University |
| Anup L. Dadlani | Stanford University |
| Hyo Jin Kim | Stanford University |
| Peter Schindler | Stanford University |
| Ki-Hyun Kim | Samsung Electronics Co. |
| Fritz B. Prinz | Stanford University |
Films
Plasma SiNx
Plasma AlN
Plasma SiAlN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Etch Rate
Analysis: Wet Etch
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| SiO2 |
| Quartz |
Notes
| 886 |