Publication Information

Title:
Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2016, 8 (27), pp 17599-17605
Date:
2016-06-13

Author Information

Name Institution
Yongmin KimStanford University
J ProvineStanford University
Steve P. WalchStanford University
Joonsuk ParkStanford University
Witchukorn PhuthongStanford University
Anup L. DadlaniStanford University
Hyo Jin KimStanford University
Peter SchindlerStanford University
Ki-Hyun KimSamsung Electronics Co.
Fritz B. PrinzStanford University

Films




Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Etch Rate
Analysis: Wet Etch

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

SiO2
Quartz

Keywords

Plasma vs Thermal Comparison

Notes

886