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Publication Information

Title: Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition

Type: Journal

Info: Thin Solid Films Volume 562, 1 July 2014, Pages 519-524

Date: 2014-04-25

DOI: http://dx.doi.org/10.1016/j.tsf.2014.04.084

Author Information

Name

Institution

State University of New York at Albany

Films

Plasma HfO2 using Unknown

Deposition Temperature Range = 100-250C

19962-11-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

Unknown

Compositional Depth Profiling

SIMS, Secondary Ion Mass Spectrometry

Unknown

Unknown

I-V, Current-Voltage Measurements

Unknown

Substrates

Cu

Keywords

Resistance RAM

Notes

245

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