Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition

Type:
Journal
Info:
Thin Solid Films Volume 562, 1 July 2014, Pages 519-524
Date:
2014-04-25
DOI:
http://dx.doi.org/10.1016/j.tsf.2014.04.084

Author Information

Name Institution
Benjamin David BriggsState University of New York at Albany

Films

Plasma HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-250C

Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Unknown
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Cu

Notes

245