Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition

Type:
Journal
Info:
Thin Solid Films Volume 562, 1 July 2014, Pages 519-524
Date:
2014-04-25

Author Information

Name Institution
Benjamin David BriggsState University of New York at Albany

Films


Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Unknown
Analysis: I-V, Current-Voltage Measurements

Substrates

Cu

Notes

245