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Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Experimental and theoretical determination of the role of ions in atomic layer annealing
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
Propagating gene expression fronts in a one-dimensional coupled system of artificial cells
Type:
Journal
Info:
Nature Physics (2015)
Date:
2015-09-21
Author Information
| Name | Institution |
|---|---|
| Alexandra M. Tayar | Weizmann Institute of Science |
| Eyal Karzbrun | Weizmann Institute of Science |
| Vincent Noireaux | University of Minnesota |
| Roy H. Bar-Ziv | Weizmann Institute of Science |
Films
Plasma SiO2
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
Film/Plasma Properties
Substrates
| Silicon |
Keywords
Notes
| 401 |