Publication Information

Title: Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact

Type: Journal

Info: Appl. Phys. Lett. 101, 233901 (2012)

Date: 2012-12-03

DOI: http://dx.doi.org/10.1063/1.4769041

Author Information

Name

Institution

Weizmann Institute of Science

Weizmann Institute of Science

Weizmann Institute of Science

Weizmann Institute of Science

Films

Deposition Temperature = 250C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

-

Thickness

TEM, Transmission Electron Microscope

-

Photovoltaic Performance

I-V, Current-Voltage Measurements

-

Inversion Layer

C-V, Capacitance-Voltage Measurements

-

Fixed Charge

C-V, Capacitance-Voltage Measurements

-

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

-

Interface Trap Density

C-V, Capacitance-Voltage Measurements

-

Carrier Concentration

C-V, Capacitance-Voltage Measurements

-

Built-in Voltage

C-V, Capacitance-Voltage Measurements

-

Inversion Layer

Kelvin Probe (SPV) Surface PhotoVoltage Measurements

-

Built-in Voltage

Kelvin Probe (SPV) Surface PhotoVoltage Measurements

-

Substrates

Si(111)

Keywords

n-type Silicon Solar Cell

Notes

Si(111) substrates degreased and etched.

Annealed 30min at 425C to reduce interface trap density.

Ultratech Fiji PEALD Al2O3 for silicon solar cell inversion layer.

57



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