Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact

Type:
Journal
Info:
Appl. Phys. Lett. 101, 233901 (2012)
Date:
2012-12-03
DOI:
http://dx.doi.org/10.1063/1.4769041

Author Information

Name Institution
A. S. EricksonWeizmann Institute of Science
N. K. KedemWeizmann Institute of Science
A. E. Haj-YahiaWeizmann Institute of Science
D. CahenWeizmann Institute of Science

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Photovoltaic Performance
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Inversion Layer
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Carrier Concentration
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Built-in Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Inversion Layer
Analysis: Kelvin Probe (SPV) Surface PhotoVoltage Measurements
Diagnostic: -

Characteristic: Built-in Voltage
Analysis: Kelvin Probe (SPV) Surface PhotoVoltage Measurements
Diagnostic: -

Substrates

Si(111)

Notes

Si(111) substrates degreased and etched.
Annealed 30min at 425C to reduce interface trap density.
Ultratech Fiji PEALD Al2O3 for silicon solar cell inversion layer.
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