Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact

Type:
Journal
Info:
Appl. Phys. Lett. 101, 233901 (2012)
Date:
2012-12-03

Author Information

Name Institution
A. S. EricksonWeizmann Institute of Science
N. K. KedemWeizmann Institute of Science
A. E. Haj-YahiaWeizmann Institute of Science
D. CahenWeizmann Institute of Science

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Photovoltaic Performance
Analysis: I-V, Current-Voltage Measurements

Characteristic: Inversion Layer
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Carrier Concentration
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Built-in Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Inversion Layer
Analysis: Kelvin Probe (SPV) Surface PhotoVoltage Measurements

Characteristic: Built-in Voltage
Analysis: Kelvin Probe (SPV) Surface PhotoVoltage Measurements

Substrates

Si(111)

Notes

Si(111) substrates degreased and etched.
Annealed 30min at 425C to reduce interface trap density.
Ultratech Fiji PEALD Al2O3 for silicon solar cell inversion layer.
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