Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

Type:
Journal
Info:
Appl. Phys. Lett. 103, 082110 (2013)
Date:
2013-08-20
DOI:
http://dx.doi.org/10.1063/1.4818792

Author Information

Name Institution
Neeraj NepalU.S. Naval Research Laboratory
Syed B. QadriU.S. Naval Research Laboratory
Jennifer K. HiteU.S. Naval Research Laboratory
Nadeemullah A. MahadikU.S. Naval Research Laboratory
Michael A. MastroU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 200-650C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Band Gap
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Resistivity, Sheet Resistance
Analysis: Two-point Probe
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Substrates

Si(111)
Sapphire
GaN

Notes

All substrates solvent cleaned and DI rinsed.
Si(111) HF cleaned.
GaN HF + pirahna cleaned.
In situ sample prep included TMG + H2 plasma to simulate Ga-flash-off process followed by H2 plasma and N2 plasma.
95