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Publication Information

Title: Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

Type: Journal

Info: Appl. Phys. Lett. 103, 082110 (2013)

Date: 2013-08-20

DOI: http://dx.doi.org/10.1063/1.4818792

Author Information

Name

Institution

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

Films

Deposition Temperature Range = 200-650C

75-24-1

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam VASE

Refractive Index

Ellipsometry

J.A. Woollam VASE

Band Gap

Ellipsometry

J.A. Woollam VASE

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Resistivity, Sheet Resistance

Two-point Probe

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Chemical Composition, Impurities

SIMS, Secondary Ion Mass Spectrometry

Unknown

Substrates

Si(111)

Sapphire

GaN

Keywords

AlN

RF Electronics

Optical

Thin Film Solar Cell

HEMT, High Electron Mobility Transistor

Notes

All substrates solvent cleaned and DI rinsed.

Si(111) HF cleaned.

GaN HF + pirahna cleaned.

In situ sample prep included TMG + H2 plasma to simulate Ga-flash-off process followed by H2 plasma and N2 plasma.

95



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