Publication Information

Title:
Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
Type:
Journal
Info:
Appl. Phys. Lett. 103, 082110 (2013)
Date:
2013-08-20

Author Information

Name Institution
Neeraj NepalU.S. Naval Research Laboratory
Syed B. QadriU.S. Naval Research Laboratory
Jennifer K. HiteU.S. Naval Research Laboratory
Nadeemullah A. MahadikU.S. Naval Research Laboratory
Michael A. MastroU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Band Gap
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Two-point Probe

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry

Substrates

Si(111)
Sapphire
GaN

Keywords

AlN
RF Electronics
Optical
Thin Film Solar Cell
HEMT, High Electron Mobility Transistor

Notes

All substrates solvent cleaned and DI rinsed.
Si(111) HF cleaned.
GaN HF + pirahna cleaned.
In situ sample prep included TMG + H2 plasma to simulate Ga-flash-off process followed by H2 plasma and N2 plasma.
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