Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics

Type:
Journal
Info:
APPLIED PHYSICS LETTERS 101, 093702 (2012)
Date:
2012-08-14
DOI:
http://dx.doi.org/10.1063/1.4748322

Author Information

Name Institution
Xianzong XieUniversity of Utah
Loren RiethUniversity of Utah
Srinivas MeruguUniversity of Utah
Prashant TathireddyUniversity of Utah
Florian SolzbacherUniversity of Utah

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 120C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Silicon
Ti
Pt
Au
SiO2

Notes

Ultratech Fiji PEALD Al2O3 for biomedical implant encapsulation.
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