Passivation effects of atomic-layer-deposited aluminum oxide
Type:
Journal
Info:
EPJ Photovoltaics 4, 45107 (2013)
Date:
2013-09-27
Author Information
| Name | Institution |
|---|---|
| R. Kotipalli | Universite catholique de Louvain (UCL) |
| R. Delamare | Universite catholique de Louvain (UCL) |
| Olivier Poncelet | Universite catholique de Louvain (UCL) |
| Xiaohui Tang | Universite catholique de Louvain (UCL) |
| Laurent A. Francis | Universite catholique de Louvain (UCL) |
| Denis Flandre | Universite catholique de Louvain (UCL) |
Films
Plasma Al2O3
Thermal Al2O3
Film/Plasma Properties
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Surface Recombination Velocity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Lifetime
Analysis: Lifetime Testing
Characteristic: Interfacial Layer
Analysis: -
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(100) |
| Si(111) |
Notes
| Substrates pirahna cleaned followed by HF-dip. |
| 142 |