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Passivation effects of atomic-layer-deposited aluminum oxide

Type:
Journal
Info:
EPJ Photovoltaics 4, 45107 (2013)
Date:
2013-09-27
DOI:
http://dx.doi.org/10.1051/epjpv/2013023

Author Information

Name Institution
R. KotipalliUniversite catholique de Louvain (UCL)
R. DelamareUniversite catholique de Louvain (UCL)
Olivier PonceletUniversite catholique de Louvain (UCL)
Xiaohui TangUniversite catholique de Louvain (UCL)
Laurent A. FrancisUniversite catholique de Louvain (UCL)
Denis FlandreUniversite catholique de Louvain (UCL)

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Thermal Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Surface Recombination Velocity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Lifetime
Analysis: Lifetime Testing
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Interfacial Layer
Analysis: -
Diagnostic: -

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

Si(100)
Si(111)

Notes

Substrates pirahna cleaned followed by HF-dip.
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