Publication Information

Title: Passivation effects of atomic-layer-deposited aluminum oxide

Type: Journal

Info: EPJ Photovoltaics 4, 45107 (2013)

Date: 2013-09-27

DOI: http://dx.doi.org/10.1051/epjpv/2013023

Author Information

Name

Institution

Universite catholique de Louvain (UCL)

Universite catholique de Louvain (UCL)

Universite catholique de Louvain (UCL)

Universite catholique de Louvain (UCL)

Universite catholique de Louvain (UCL)

Universite catholique de Louvain (UCL)

Films

Deposition Temperature = 250C

75-24-1

7782-44-7

Deposition Temperature = 250C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Fixed Charge

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Interface State Density

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Surface Recombination Velocity

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Lifetime

Lifetime Testing

Sinton WCT-120 Lifetime Tester

Interfacial Layer

Unknown

Unknown

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Substrates

Si(100)

Si(111)

Keywords

Passivation

Notes

Substrates pirahna cleaned followed by HF-dip.

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