Passivation effects of atomic-layer-deposited aluminum oxide

Type:
Journal
Info:
EPJ Photovoltaics 4, 45107 (2013)
Date:
2013-09-27

Author Information

Name Institution
R. KotipalliUniversite catholique de Louvain (UCL)
R. DelamareUniversite catholique de Louvain (UCL)
Olivier PonceletUniversite catholique de Louvain (UCL)
Xiaohui TangUniversite catholique de Louvain (UCL)
Laurent A. FrancisUniversite catholique de Louvain (UCL)
Denis FlandreUniversite catholique de Louvain (UCL)

Films

Plasma Al2O3


Thermal Al2O3


Film/Plasma Properties

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Surface Recombination Velocity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Lifetime
Analysis: Lifetime Testing

Characteristic: Interfacial Layer
Analysis: -

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)
Si(111)

Keywords

Passivation

Notes

Substrates pirahna cleaned followed by HF-dip.
142