Publication Information

Title: Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide

Type: Journal

Info: Thin Solid Films 649 (2018) 24 - 29

Date: 2018-01-13

DOI: https://doi.org/10.1016/j.tsf.2018.01.019

Author Information

Name

Institution

Michael T. Barako

Stanford University

Timothy S. English

Stanford University

Shilpi Roy-Panzer

Stanford University

Thomas W. Kenny

Stanford University

K. E. Goodson

Stanford University

Films

Plasma SiO2 using Veeco - Ultratech - Cambridge NanoTech Fiji

Deposition Temperature = 200C

3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane

15112-89-7

Where to buy precursor

O2, Oxygen

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

-

Uniformity

Ellipsometry

-

Resistivity, Sheet Resistance

Four-point Probe

-

Electrical Isolation

Four-point Probe

-

Substrates

SiO2

Pt

Keywords

Notes

1219


Mark Sowa

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