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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide
Type:
Journal
Info:
Thin Solid Films 649 (2018) 24 - 29
Date:
2018-01-13
Author Information
| Name | Institution |
|---|---|
| Michael T. Barako | Stanford University |
| Timothy S. English | Stanford University |
| Shilpi Roy-Panzer | Stanford University |
| Thomas W. Kenny | Stanford University |
| K. E. Goodson | Stanford University |
Films
Plasma SiO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Uniformity
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Electrical Isolation
Analysis: Four-point Probe
Substrates
| SiO2 |
| Pt |
Keywords
Notes
| 1219 |