Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide

Type:
Journal
Info:
Thin Solid Films 649 (2018) 24 - 29
Date:
2018-01-13
DOI:
https://doi.org/10.1016/j.tsf.2018.01.019

Author Information

Name Institution
Michael T. BarakoStanford University
Timothy S. EnglishStanford University
Shilpi Roy-PanzerStanford University
Thomas W. KennyStanford University
Kenneth E. GoodsonStanford University

Films

Plasma SiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Uniformity
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Electrical Isolation
Analysis: Four-point Probe
Diagnostic: -

Substrates

SiO2
Pt

Keywords

Notes

1219