Publication Information

Title:
P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2013 volume 2, issue 11, R249-R253
Date:
2013-09-13

Author Information

Name Institution
Jui-Fen ChienNational Taiwan University
Huan-Yu ShihNational Taiwan University
Hua-Yang LiaoAcademia Sinica
Ray-Ming LinChang Gung University
Jing-Jong ShyueNational Taiwan University
Miin-Jang ChenNational Taiwan University

Films

Thermal ZnO





Film/Plasma Properties

Characteristic: Carrier Concentration
Analysis: Hall effect/van der Pauw method

Characteristic: Conductivity Type
Analysis: Hall effect/van der Pauw method

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence

Substrates

Sapphire

Keywords

Notes

1377