P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2013 volume 2, issue 11, R249-R253
Date:
2013-09-13
Author Information
| Name | Institution |
|---|---|
| Jui-Fen Chien | National Taiwan University |
| Huan-Yu Shih | National Taiwan University |
| Hua-Yang Liao | Academia Sinica |
| Ray-Ming Lin | Chang Gung University |
| Jing-Jong Shyue | National Taiwan University |
| Miin-Jang Chen | National Taiwan University |
Films
Thermal ZnO
Other ZnON
Other ZnO:(N:Ga)
Other MgZnO:(N:Ga)
Film/Plasma Properties
Characteristic: Carrier Concentration
Analysis: Hall effect/van der Pauw method
Characteristic: Conductivity Type
Analysis: Hall effect/van der Pauw method
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Substrates
| Sapphire |
Notes
| 1377 |