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Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices

Type:
Journal
Info:
J. Vac. Sci. Technol. B 36(5), Sep/Oct 2018
Date:
2018-08-17
DOI:
http://dx.doi.org/10.1116/1.5051519

Author Information

Name Institution
Chung-Chun HsuNational Chiao Tung University
Wei-Chun ChiNational Chiao Tung University
Yi-He TsaiNational Chiao Tung University
Ming-Li TsaiNational Chiao Tung University
Shin-Yuan WangNational Chiao Tung University
Chen-Han ChouNational Chiao Tung University
Jun Lin ZhangNational Chiao Tung University
Guang-Li LuoNational Nano Device Labs
Chao-Hsin ChienNational Chiao Tung University

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Substrates

GeO2

Notes

1423