Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
Type:
Journal
Info:
J. Vac. Sci. Technol. B 36(5), Sep/Oct 2018
Date:
2018-08-17
Author Information
| Name | Institution |
|---|---|
| Chung-Chun Hsu | National Chiao Tung University |
| Wei-Chun Chi | National Chiao Tung University |
| Yi-He Tsai | National Chiao Tung University |
| Ming-Li Tsai | National Chiao Tung University |
| Shin-Yuan Wang | National Chiao Tung University |
| Chen-Han Chou | National Chiao Tung University |
| Jun Lin Zhang | National Chiao Tung University |
| Guang-Li Luo | National Nano Device Labs |
| Chao-Hsin Chien | National Chiao Tung University |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Interfacial Layer
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| GeO2 |
Notes
| 1423 |