Publication Information

Title:
Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
Type:
Journal
Info:
J. Vac. Sci. Technol. B 36(5), Sep/Oct 2018
Date:
2018-08-17

Author Information

Name Institution
Chung-Chun HsuNational Chiao Tung University
Wei-Chun ChiNational Chiao Tung University
Yi-He TsaiNational Chiao Tung University
Ming-Li TsaiNational Chiao Tung University
Shin-Yuan WangNational Chiao Tung University
Chen-Han ChouNational Chiao Tung University
Jun Lin ZhangNational Chiao Tung University
Guang-Li LuoNational Nano Device Labs
Chao-Hsin ChienNational Chiao Tung University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

GeO2

Keywords

Notes

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