Publication Information

Title:
Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Thin Solid Films 520 (2012) 2750-2755
Date:
2011-11-28

Author Information

Name Institution
Çağla ÖzgitBilkent University
İnci DönmezBilkent University
Mustafa AlevliBilkent University
Necmi BiyikliBilkent University

Films

Plasma AlN


Thermal AlN


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Optical Properties
Analysis: Spectrophotometry

Substrates

Si(100)
Si(111)
Sapphire
GaN
Glass
Pyrex

Keywords

PEALD Film Development
Plasma vs Thermal Comparison

Notes

Samples ultrasonic cleaned with 2-propanol, acetone, methanol, and DI water followed by HF, DI, and N2.
Ultratech Fiji PEALD AlN film development.
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