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Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Thin Solid Films 520 (2012) 2750-2755
Date:
2011-11-28
Author Information
| Name | Institution |
|---|---|
| Çağla Özgit | Bilkent University |
| İnci Dönmez | Bilkent University |
| Mustafa Alevli | Bilkent University |
| Necmi Biyikli | Bilkent University |
Films
Plasma AlN
Thermal AlN
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Optical Properties
Analysis: Spectrophotometry
Substrates
| Si(100) |
| Si(111) |
| Sapphire |
| GaN |
| Glass |
| Pyrex |
Notes
| Samples ultrasonic cleaned with 2-propanol, acetone, methanol, and DI water followed by HF, DI, and N2. |
| Ultratech Fiji PEALD AlN film development. |
| 154 |