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Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
Type:
Journal
Info:
Nanoscale Research Letters (2016) 11:235
Date:
2016-04-20
Author Information
| Name | Institution |
|---|---|
| Huan-Yu Shih | National Taiwan University |
| Fu-Chuan Chu | Chang Gung University |
| Atanu Das | Chang Gung University |
| Chia-Yu Lee | Chang Gung University |
| Ming-Jang Chen | National Taiwan University |
| Ray-Ming Lin | Chang Gung University |
Films
Plasma Ga2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| AlGaN |
Notes
| 785 |