Publication Information

Title: Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

Type: Journal

Info: Nanoscale Research Letters (2016) 11:235

Date: 2016-04-20

DOI: http://dx.doi.org/10.1186/s11671-016-1448-z

Author Information

Name

Institution

National Taiwan University

Chang Gung University

Chang Gung University

Chang Gung University

National Taiwan University

Chang Gung University

Films

Deposition Temperature = 250C

1115-99-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Ellipso Technology Elli-SE

Refractive Index

Ellipsometry

Ellipso Technology Elli-SE

Thickness

TEM, Transmission Electron Microscope

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Bonding States

XPS, X-ray Photoelectron Spectroscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

Rigaku TTRAX III

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Bruker Dimension Edge

Transistor Characteristics

Transistor Characterization

Agilent B1500A Semiconductor Device Analyzer

Substrates

AlGaN

Keywords

Notes

785



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