Publication Information

Title:
Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
Type:
Journal
Info:
Nanoscale Research Letters (2016) 11:235
Date:
2016-04-20

Author Information

Name Institution
Huan-Yu ShihNational Taiwan University
Fu-Chuan ChuChang Gung University
Atanu DasChang Gung University
Chia-Yu LeeChang Gung University
Ming-Jang ChenNational Taiwan University
Ray-Ming LinChang Gung University

Films

Plasma Ga2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

AlGaN

Keywords

Notes

785