Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors

Type:
Conference Proceedings
Info:
Proc. SPIE 9491, Sensors for Extreme Harsh Environments II, 949107
Date:
2015-04-20
DOI:
http://dx.doi.org/10.1117/12.2178091

Author Information

Name Institution
Heather C. ChiamoriStanford University
Ruth MillerStanford University
Ateeq J. SuriaStanford University
Nicholas BroadStanford University
Debbie G. SeneskyStanford University

Films

Plasma SiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

GaN

Notes

497