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AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD

Type:
Journal
Info:
Microelectronic Engineering 109 (2013) 378 - 380
Date:
2013-04-28
DOI:
http://dx.doi.org/10.1016/j.mee.2013.04.020

Author Information

Name Institution
Richard MeunierCEA - LETI MINATEC
A. TorresCEA - LETI MINATEC
E. MorvanCEA - LETI MINATEC
M. CharlesCEA - LETI MINATEC
P. GaudCEA - LETI MINATEC
F. MoranchoLaboratoire d'Analyse et d'Architecture des Systèmes (LAAS)

Films

Thermal Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Other Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

AlGaN

Notes

564