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AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
Type:
Journal
Info:
Microelectronic Engineering 109 (2013) 378 - 380
Date:
2013-04-28
Author Information
| Name | Institution |
|---|---|
| Richard Meunier | CEA - LETI MINATEC |
| A. Torres | CEA - LETI MINATEC |
| E. Morvan | CEA - LETI MINATEC |
| M. Charles | CEA - LETI MINATEC |
| P. Gaud | CEA - LETI MINATEC |
| F. Morancho | Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS) |
Films
Thermal Al2O3
Plasma Al2O3
Other Al2O3
Plasma Al2O3
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
| AlGaN |
Notes
| 564 |