Publication Information

Title:
AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
Type:
Journal
Info:
Microelectronic Engineering 109 (2013) 378 - 380
Date:
2013-04-28

Author Information

Name Institution
Richard MeunierCEA - LETI MINATEC
A. TorresCEA - LETI MINATEC
E. MorvanCEA - LETI MINATEC
M. CharlesCEA - LETI MINATEC
P. GaudCEA - LETI MINATEC
F. MoranchoLaboratoire d'Analyse et d'Architecture des Systèmes (LAAS)

Films

Thermal Al2O3


Plasma Al2O3


Other Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

AlGaN

Keywords

Notes

564