Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
Type:
Journal
Info:
IEEE Electron Device Letters, Vol. 32, No. 4, April 2011
Date:
2011-03-23
Author Information
| Name | Institution |
|---|---|
| Osama Nayfeh | U.S. Army Research Laboratory |
| Tim Marr | U.S. Army Research Laboratory |
| Madan Dubey | U.S. Army Research Laboratory |
Films
Plasma Al2O3
Thermal Al2O3
Film/Plasma Properties
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Conformality, Step Coverage
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: Raman Spectroscopy
Characteristic: Chemical Binding
Analysis: Raman Spectroscopy
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Transfer Curves
Analysis: I-V, Current-Voltage Measurements
Characteristic: Transconductance
Analysis: I-V, Current-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Mobility
Analysis: I-V, Current-Voltage Measurements
Substrates
| Graphene |
| Silicon |
Notes
| 100C PEALD samples were annealed at 250C prior to testing. |
| Plasma produces enough nucleation sites without damaging graphene substantially. |
| 97 |