Publication Information

Title:
Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
Type:
Journal
Info:
IEEE Electron Device Letters, Vol. 32, No. 4, April 2011
Date:
2011-03-23

Author Information

Name Institution
Osama NayfehU.S. Army Research Laboratory
Tim MarrU.S. Army Research Laboratory
Madan DubeyU.S. Army Research Laboratory

Films

Plasma Al2O3


Thermal Al2O3


Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Conformality, Step Coverage
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: Raman Spectroscopy

Characteristic: Chemical Binding
Analysis: Raman Spectroscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Transfer Curves
Analysis: I-V, Current-Voltage Measurements

Characteristic: Transconductance
Analysis: I-V, Current-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Mobility
Analysis: I-V, Current-Voltage Measurements

Substrates

Graphene
Silicon

Keywords

Graphene

Notes

100C PEALD samples were annealed at 250C prior to testing.
Plasma produces enough nucleation sites without damaging graphene substantially.
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