Publication Information

Title: Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors

Type: Journal

Info: IEEE Electron Device Letters, Vol. 32, No. 4, April 2011

Date: 2011-03-23

DOI: http://dx.doi.org/10.1109/LED.2011.2108258

Author Information

Name

Institution

U.S. Army Research Laboratory

U.S. Army Research Laboratory

U.S. Army Research Laboratory

Films

Deposition Temperature = 100C

75-24-1

7782-44-7

Deposition Temperature = 250C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Conformality, Step Coverage

AFM, Atomic Force Microscopy

-

Chemical Composition, Impurities

Raman Spectroscopy

-

Chemical Binding

Raman Spectroscopy

-

Thickness

Ellipsometry

-

Thickness

C-V, Capacitance-Voltage Measurements

-

Transfer Curves

I-V, Current-Voltage Measurements

-

Transconductance

I-V, Current-Voltage Measurements

-

Leakage Current

I-V, Current-Voltage Measurements

-

Breakdown Voltage

I-V, Current-Voltage Measurements

-

Mobility

I-V, Current-Voltage Measurements

-

Substrates

Graphene

Silicon

Keywords

Graphene

Notes

100C PEALD samples were annealed at 250C prior to testing.

Plasma produces enough nucleation sites without damaging graphene substantially.

97



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