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Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors

Type:
Journal
Info:
IEEE Electron Device Letters, Vol. 32, No. 4, April 2011
Date:
2011-03-23
DOI:
http://dx.doi.org/10.1109/LED.2011.2108258

Author Information

Name Institution
Osama NayfehU.S. Army Research Laboratory
Tim MarrU.S. Army Research Laboratory
Madan DubeyU.S. Army Research Laboratory

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Thermal Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: Raman Spectroscopy
Diagnostic: -

Characteristic: Chemical Binding
Analysis: Raman Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Transfer Curves
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Transconductance
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Mobility
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Graphene
Silicon

Notes

100C PEALD samples were annealed at 250C prior to testing.
Plasma produces enough nucleation sites without damaging graphene substantially.
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