Publication Information

Title:
Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
Type:
Journal
Info:
ECS J. Solid State Sci. Technol. volume 7, issue 2, N15--N19
Date:
2018-01-18

Author Information

Name Institution
Chen-Han ChouNational Chiao Tung University
Yu-Hong LuNational Chiao Tung University
Yi-He TsaiNational Chiao Tung University
An-Shih ShihNational Chiao Tung University
Wen-Kuan YehNational Nano Device Labs
Chao-Hsin ChienNational Chiao Tung University

Films

Plasma Al2O3



Film/Plasma Properties

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy

Substrates

GeO2
YGeO

Keywords

Notes

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