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Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge

Type:
Journal
Info:
ECS J. Solid State Sci. Technol. volume 7, issue 2, N15--N19
Date:
2018-01-18
DOI:
http://dx.doi.org/10.1149/2.0161802jss

Author Information

Name Institution
Chen-Han ChouNational Chiao Tung University
Yu-Hong LuNational Chiao Tung University
Yi-He TsaiNational Chiao Tung University
An-Shih ShihNational Chiao Tung University
Wen-Kuan YehNational Nano Device Labs
Chao-Hsin ChienNational Chiao Tung University

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

GeO2
YGeO

Notes

1422