Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
Type:
Journal
Info:
ECS J. Solid State Sci. Technol. volume 7, issue 2, N15--N19
Date:
2018-01-18
Author Information
| Name | Institution |
|---|---|
| Chen-Han Chou | National Chiao Tung University |
| Yu-Hong Lu | National Chiao Tung University |
| Yi-He Tsai | National Chiao Tung University |
| An-Shih Shih | National Chiao Tung University |
| Wen-Kuan Yeh | National Nano Device Labs |
| Chao-Hsin Chien | National Chiao Tung University |
Films
Plasma Al2O3
Plasma HfO2
Film/Plasma Properties
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Substrates
| GeO2 |
| YGeO |
Notes
| 1422 |