Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films

Type:
Journal
Info:
Journal of Applied Physics 125, 045301 (2019)
Date:
2018-12-30
DOI:
http://dx.doi.org/10.1063/1.5061780

Author Information

Name Institution
Kyungjin KimGeorgia Institute of Technology
Olivier N PierronGeorgia Institute of Technology
Samuel GrahamGeorgia Institute of Technology

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Substrates

Si3N4

Notes

1503