Publication Information

Title:
A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
Type:
Journal
Info:
Electronic Materials Letters, Vol. 13, No. 2 (2017), pp. 114--119
Date:
2016-11-14

Author Information

Name Institution
Halit AltuntasCankiri Karatekin University
Turkan BayrakHelmholtz-Zentrum Dresden-Rossendorf

Films


Plasma AlN


Film/Plasma Properties

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Threshold Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Effective Charge Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

Si(100)

Keywords

Notes

1393