Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures

Type:
Journal
Info:
Coatings 2021, 11, 482
Date:
2021-04-07
DOI:
http://dx.doi.org/10.3390/coatings11040482

Author Information

Name Institution
Ramasis GoswamiU.S. Naval Research Laboratory
Syed B. QadriU.S. Naval Research Laboratory
Neeraj NepalU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range = 360-420C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2200FX

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2200FX

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2200FX

Substrates

Si(111)
GaN

Notes

1571