Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology

Type:
Journal
Info:
J. Phys. Chem. C, 2021, 125 (17), pp 9383-9390
Date:
2021-04-21

Author Information

Name Institution
Julia D. LenefUniversity of Michigan
Jaesung JoUniversity of Michigan
Orlando TrejoUniversity of Michigan
David J. MandiaUniversity of Michigan
Rebecca L. PetersonUniversity of Michigan
Neil P. DasguptaUniversity of Michigan

Films


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Optical Bandgap
Analysis: Ellipsometry

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XANES, X-ray Absorption Near-Edge Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

SiO2

Notes

1663