Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
Type:
Journal
Info:
Appl. Phys. Lett. 106, 142103 (2015)
Date:
2015-03-26
Author Information
| Name | Institution |
|---|---|
| Wei Yi | HRL Laboratories |
| Andrey A. Kiselev | HRL Laboratories |
| Jacob Thorp | HRL Laboratories |
| Ramsey Noah | HRL Laboratories |
| Binh-Minh Nguyen | HRL Laboratories |
| Steven Bui | HRL Laboratories |
| Rajesh D. Rajavel | HRL Laboratories |
| Tahir Hussain | HRL Laboratories |
| Mark Gyure | HRL Laboratories |
| Philip Kratz | Stanford University |
| Qi Qian | Purdue University |
| Michael J. Manfra | Purdue University |
| Vlad S. Pribiag | Delft University of Technology |
| Leo P. Kouwenhoven | Delft University of Technology |
| Charles M. Marcus | University of Copenhagen |
| Marko Sokolich | HRL Laboratories |
Films
Plasma HfO2
Film/Plasma Properties
Characteristic: Breakdown Voltage
Analysis: -
Characteristic: Thickness
Analysis: -
Characteristic: Refractive Index
Analysis: -
Characteristic: Dielectric Constant, Permittivity
Analysis: -
Characteristic: Interface Trap Density
Analysis: -
Substrates
| InSb |
Notes
| Predeposition treatments with N2 plasma and TMA pulses. |
| Ultratech Fiji PEALD HfO2 gate dielectric for improved InSb/In1-xAlxSb quantum well heterostructure. |
| 304 |