Publication Information

Title: Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures

Type: Journal

Info: Appl. Phys. Lett. 106, 142103 (2015)

Date: 2015-03-26

DOI: http://dx.doi.org/10.1063/1.4917027

Author Information

Name

Institution

HRL Laboratories

HRL Laboratories

HRL Laboratories

HRL Laboratories

HRL Laboratories

HRL Laboratories

HRL Laboratories

HRL Laboratories

HRL Laboratories

Stanford University

Purdue University

Purdue University

Delft University of Technology

Delft University of Technology

University of Copenhagen

HRL Laboratories

Films

Deposition Temperature = 175C

19962-11-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Breakdown Voltage

Unknown

-

Thickness

Unknown

-

Refractive Index

Unknown

-

Dielectric Constant, Permittivity

Unknown

-

Interface Trap Density

Unknown

-

Substrates

InSb

Keywords

Gate Dielectric

Notes

Predeposition treatments with N2 plasma and TMA pulses.

Ultratech Fiji PEALD HfO2 gate dielectric for improved InSb/In1-xAlxSb quantum well heterostructure.

304



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