The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition

Type:
Journal
Info:
Acta Physica Polonica A, vol.120, no.6A, 2011.
Date:
2011-09-19
DOI:
http://yadda.icm.edu.pl/przyrbwn/element/bwmeta1.element.bwnjournal-article-appv120n6ap17kz

Author Information

Name Institution
Mustafa AlevliBilkent University
Çağla ÖzgitBilkent University
İnci DönmezBilkent University

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 100-500C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Asylum Research MFP-3D

Characteristic: Absorption Edges
Analysis: Optical Transmission
Diagnostic: -

Substrates

Si(100)
SiO2

Notes

Ultratech Fiji PEALD AlN film study.
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