Practical Challenges of Processing III-Nitride/Graphene/SiC Devices

Type:
Journal
Info:
CS MANTECH Conference, May 18th - 21st, 2015, Scottsdale, Arizona, USA
Date:
2015-05-18

Author Information

Name Institution
Andrew D. KoehlerU.S. Naval Research Laboratory
Neeraj NepalSotera Defense Solutions
Marko J. TadjerU.S. Naval Research Laboratory
Rachael L Myers-WardU.S. Naval Research Laboratory
Virginia D. WheelerU.S. Naval Research Laboratory
Travis J. AndersonU.S. Naval Research Laboratory
Michael A. MastroU.S. Naval Research Laboratory
Jordan D. GreenleeU.S. Naval Research Laboratory
Jennifer K. HiteU.S. Naval Research Laboratory
Karl D. HobartU.S. Naval Research Laboratory
Francis J. KubU.S. Naval Research Laboratory

Films

Thermal Al2O3


Plasma AlN


Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Leakage Current
Analysis: Transistor Characterization

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Graphene

Keywords

Notes

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