Publication Information

Title: Practical Challenges of Processing III-Nitride/Graphene/SiC Devices

Type: Journal

Info: CS MANTECH Conference, May 18th - 21st, 2015, Scottsdale, Arizona, USA

Date: 2015-05-18

DOI: http://csmantech.org/OldSite/Digests/2015/papers/13.5-076.pdf

Author Information

Name

Institution

U.S. Naval Research Laboratory

Sotera Defense Solutions

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

Films

Deposition Temperature Range N/A

75-24-1

7732-18-5

Deposition Temperature = 280C

75-24-1

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Leakage Current

Transistor Characterization

-

Transistor Characteristics

Transistor Characterization

-

Substrates

Graphene

Keywords

Notes

760



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