Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
Type:
Journal
Info:
CS MANTECH Conference, May 18th - 21st, 2015, Scottsdale, Arizona, USA
Date:
2015-05-18
Author Information
| Name | Institution |
|---|---|
| Andrew D. Koehler | U.S. Naval Research Laboratory |
| Neeraj Nepal | Sotera Defense Solutions |
| Marko J. Tadjer | U.S. Naval Research Laboratory |
| Rachael L Myers-Ward | U.S. Naval Research Laboratory |
| Virginia D. Wheeler | U.S. Naval Research Laboratory |
| Travis J. Anderson | U.S. Naval Research Laboratory |
| Michael A. Mastro | U.S. Naval Research Laboratory |
| Jordan D. Greenlee | U.S. Naval Research Laboratory |
| Jennifer K. Hite | U.S. Naval Research Laboratory |
| Karl D. Hobart | U.S. Naval Research Laboratory |
| Francis J. Kub | U.S. Naval Research Laboratory |
Films
Thermal Al2O3
Plasma AlN
Film/Plasma Properties
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Leakage Current
Analysis: Transistor Characterization
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Graphene |
Notes
| 760 |