Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2013, 5 (2), pp 227-232
Date:
2012-12-21
Author Information
| Name | Institution |
|---|---|
| Jui-Fen Chien | National Taiwan University |
| Hua-Yang Liao | Academia Sinica |
| Sheng-Fu Yu | National Cheng Kung University |
| Ray-Ming Lin | Chang Gung University |
| Makoto Shiojiri | Kyoto Institute of Technology |
| Jing-Jong Shyue | National Taiwan University |
| Miin-Jang Chen | National Taiwan University |
Films
Other ZnON
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Carrier Concentration
Analysis: Hall effect/van der Pauw method
Characteristic: Mobility
Analysis: Hall effect/van der Pauw method
Characteristic: Resistivity, Sheet Resistance
Analysis: Hall effect/van der Pauw method
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Substrates
| GaN |
Notes
| 673 |