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Publication Information

Title: Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique

Type: Journal

Info: ACS Appl. Mater. Interfaces, 2013, 5 (2), pp 227-232

Date: 2012-12-21

DOI: http://dx.doi.org/10.1021/am301799j

Author Information

Name

Institution

National Taiwan University

Academia Sinica

National Cheng Kung University

Chang Gung University

Kyoto Institute of Technology

National Taiwan University

National Taiwan University

Films

Deposition Temperature = 180C

557-20-0

7732-18-5

7664-41-7

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

PHI VersaProbe 5000

Carrier Concentration

Hall effect/van der Pauw method

Ecopia HMS-3000

Mobility

Hall effect/van der Pauw method

Ecopia HMS-3000

Resistivity, Sheet Resistance

Hall effect/van der Pauw method

Ecopia HMS-3000

Photoluminescence

PL, PhotoLuminescence

Custom

Electrical Properties

I-V, Current-Voltage Measurements

Keithley 2430 Source Meter

Images

TEM, Transmission Electron Microscope

Unknown

Substrates

GaN

Keywords

Notes

673



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