Publication Information

Title:
Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2013, 5 (2), pp 227-232
Date:
2012-12-21

Author Information

Name Institution
Jui-Fen ChienNational Taiwan University
Hua-Yang LiaoAcademia Sinica
Sheng-Fu YuNational Cheng Kung University
Ray-Ming LinChang Gung University
Makoto ShiojiriKyoto Institute of Technology
Jing-Jong ShyueNational Taiwan University
Miin-Jang ChenNational Taiwan University

Films


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Carrier Concentration
Analysis: Hall effect/van der Pauw method

Characteristic: Mobility
Analysis: Hall effect/van der Pauw method

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall effect/van der Pauw method

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence

Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Substrates

GaN

Keywords

Notes

673