Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
Type:
Journal
Info:
2013 The International Conference on Compound Semiconductor Manufacturing Technology
Date:
2013-05-13
Author Information
| Name | Institution |
|---|---|
| Andrew D. Koehler | U.S. Naval Research Laboratory |
| Neeraj Nepal | U.S. Naval Research Laboratory |
| Travis J. Anderson | U.S. Naval Research Laboratory |
| Marko J. Tadjer | U.S. Naval Research Laboratory |
| Karl D. Hobart | U.S. Naval Research Laboratory |
| Charles R. Eddy, Jr. | U.S. Naval Research Laboratory |
| Francis J. Kub | U.S. Naval Research Laboratory |
Films
Plasma AlN
Film/Plasma Properties
Substrates
Notes
| 586 |