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Publication Information

Title: Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy

Type: Journal

Info: 2013 The International Conference on Compound Semiconductor Manufacturing Technology

Date: 2013-05-13

DOI: http://www.csmantech.org/Digests/2013/papers/040.pdf

Author Information

Name

Institution

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

Films

Deposition Temperature Range = 300-500C

75-24-1

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Passivation

Notes

586


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