The publication database currently has 1536 entries.
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Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
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Publication Information
Title:
Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
Type:
Journal
Info:
Optical Engineering, 51(10), 104003 (October 2012)
Date:
2012-09-17
Author Information
| Name | Institution |
|---|---|
| Richard Fu | U.S. Army Research Laboratory |
| James Pattison | U.S. Army Research Laboratory |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Substrates
| HgCdTe |
| Silicon |
Keywords
Notes
| 560 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |