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Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Experimental and theoretical determination of the role of ions in atomic layer annealing
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
Type:
Journal
Info:
Optical Engineering, 51(10), 104003 (October 2012)
Date:
2012-09-17
Author Information
| Name | Institution |
|---|---|
| Richard Fu | U.S. Army Research Laboratory |
| James Pattison | U.S. Army Research Laboratory |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Substrates
| HgCdTe |
| Silicon |
Keywords
Notes
| 560 |