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Publication Information

Title: Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems

Type: Conference Proceedings

Info: 12th International Symposium on Materials in the Space Environment (ISME'12)

Date: 2012-09-24

DOI: http://hdl.handle.net/2078/123863

Author Information

Name

Institution

Universite catholique de Louvain (UCL)

Universite catholique de Louvain (UCL)

Universite catholique de Louvain (UCL)

Universite catholique de Louvain (UCL)

Hewlett-Packard

Cranfield University

Universite catholique de Louvain (UCL)

Universite catholique de Louvain (UCL)

Universite catholique de Louvain (UCL)

Films

Deposition Temperature Range = 25-250C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Fixed Charge

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Interface State Density

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Midgap Voltage

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Substrates

Si(100)

Keywords

Radiation Hardness

Notes

644


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