Title: Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
Type: Conference Proceedings
Info: 12th International Symposium on Materials in the Space Environment (ISME'12)
Date: 2012-09-24
DOI: http://hdl.handle.net/2078/123863
Name
Institution
Universite catholique de Louvain (UCL)
Universite catholique de Louvain (UCL)
Universite catholique de Louvain (UCL)
Universite catholique de Louvain (UCL)
Hewlett-Packard
Cranfield University
Universite catholique de Louvain (UCL)
Universite catholique de Louvain (UCL)
Universite catholique de Louvain (UCL)
Characteristic
Analysis
Diagnostic
Fixed Charge
C-V, Capacitance-Voltage Measurements
Agilent B1500A Semiconductor Device Analyzer
Interface State Density
C-V, Capacitance-Voltage Measurements
Agilent B1500A Semiconductor Device Analyzer
Midgap Voltage
C-V, Capacitance-Voltage Measurements
Agilent B1500A Semiconductor Device Analyzer
Si(100)
Radiation Hardness
644
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