Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems

Type:
Conference Proceedings
Info:
12th International Symposium on Materials in the Space Environment (ISME'12)
Date:
2012-09-24
DOI:
http://hdl.handle.net/2078/123863

Author Information

Name Institution
P. GkotsisUniversite catholique de Louvain (UCL)
V. KilchytskaUniversite catholique de Louvain (UCL)
Otilia MilitaruUniversite catholique de Louvain (UCL)
Guy BergerUniversite catholique de Louvain (UCL)
C. FragkiadakisHewlett-Packard
P. B. KirbyCranfield University
Jean-Pierre RaskinUniversite catholique de Louvain (UCL)
Denis FlandreUniversite catholique de Louvain (UCL)
Laurent A. FrancisUniversite catholique de Louvain (UCL)

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-250C

Film/Plasma Properties

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Midgap Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

Si(100)

Keywords

Radiation Hardness

Notes

644