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Atomic layer epitaxy of germanium
Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films
Plasma-assisted atomic layer deposition of nickel oxide as hole transport layer for hybrid perovskite solar cells
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Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
Type:
Conference Proceedings
Info:
12th International Symposium on Materials in the Space Environment (ISME'12)
Date:
2012-09-24
Author Information
| Name | Institution |
|---|---|
| P. Gkotsis | Universite catholique de Louvain (UCL) |
| V. Kilchytska | Universite catholique de Louvain (UCL) |
| Otilia Militaru | Universite catholique de Louvain (UCL) |
| Guy Berger | Universite catholique de Louvain (UCL) |
| C. Fragkiadakis | Hewlett-Packard |
| P. B. Kirby | Cranfield University |
| Jean-Pierre Raskin | Universite catholique de Louvain (UCL) |
| Denis Flandre | Universite catholique de Louvain (UCL) |
| Laurent A. Francis | Universite catholique de Louvain (UCL) |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Midgap Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(100) |
Keywords
| Radiation Hardness |
Notes
| 644 |