Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems

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Publication Information

Title: Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems

Type: Conference Proceedings

Info: 12th International Symposium on Materials in the Space Environment (ISME'12)

Date: 2012-09-24

DOI: http://hdl.handle.net/2078/123863

Author Information

Name

Institution

Universite catholique de Louvain (UCL)

Universite catholique de Louvain (UCL)

Otilia Militaru

Universite catholique de Louvain (UCL)

Universite catholique de Louvain (UCL)

C. Fragkiadakis

Hewlett-Packard

Cranfield University

Jean-Pierre Raskin

Universite catholique de Louvain (UCL)

Universite catholique de Louvain (UCL)

Laurent A. Francis

Universite catholique de Louvain (UCL)

Films

Plasma Al₂O₃ using Cambridge NanoTech Fiji

Deposition Temperature Range = 25-250C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH₃)₃, AlMe₃, Al₂(CH₃)₆, Al₂Me₆

75-24-1

Where to buy precursor

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Fixed Charge

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Interface State Density

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Midgap Voltage

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Substrates

Si(100)

Keywords

Radiation Hardness

Notes

644

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