Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation

Type:
Journal
Info:
Journal of Applied Physics 124, 125309 (2018)
Date:
2018-09-27
DOI:
http://dx.doi.org/10.1063/1.5041062

Author Information

Name Institution
D. DamianosGrenoble Alps University (UGA)
G. VitrantGrenoble Alps University (UGA)
A. Kaminski-CachopoGrenoble Alps University (UGA)
D. Blanc-PelissierLyon Nanotechnology Institute (INL)
G. GhibaudoLyon Nanotechnology Institute (INL)
M. LeiFemtoMetrix
J. ChangalaFemtoMetrix
A. BouchardGrenoble Alps University (UGA)
X. MescotGrenoble Alps University (UGA)
M. GriGrenoble Alps University (UGA)
Sorin CristoloveanuGrenoble Alps University (UGA)
I. IonicaGrenoble Alps University (UGA)

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Thermal Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Passivation
Analysis: SHG, Second Harmonic Generation
Diagnostic: Femtometrix Harmonic F1X

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Fixed Charge
Analysis: Microwave Photoconductance Decay
Diagnostic: Semilab PV-2000

Characteristic: Interface Trap Density
Analysis: Microwave Photoconductance Decay
Diagnostic: Semilab PV-2000

Characteristic: Minority Carrier Lifetime
Analysis: Microwave Photoconductance Decay
Diagnostic: Semilab PV-2000

Substrates

Si(100)

Notes

1279