Publication Information

Title:
Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
Type:
Journal
Info:
Journal of Applied Physics 124, 125309 (2018)
Date:
2018-09-27

Author Information

Name Institution
D. DamianosGrenoble Alps University (UGA)
G. VitrantGrenoble Alps University (UGA)
A. Kaminski-CachopoGrenoble Alps University (UGA)
D. Blanc-PelissierLyon Nanotechnology Institute (INL)
G. GhibaudoLyon Nanotechnology Institute (INL)
M. LeiFemtoMetrix
J. ChangalaFemtoMetrix
A. BouchardGrenoble Alps University (UGA)
X. MescotGrenoble Alps University (UGA)
M. GriGrenoble Alps University (UGA)
Sorin CristoloveanuGrenoble Alps University (UGA)
I. IonicaGrenoble Alps University (UGA)

Films

Plasma Al2O3


Thermal Al2O3


Film/Plasma Properties

Characteristic: Passivation
Analysis: SHG, Second Harmonic Generation

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: Microwave Photoconductance Decay

Characteristic: Interface Trap Density
Analysis: Microwave Photoconductance Decay

Characteristic: Minority Carrier Lifetime
Analysis: Microwave Photoconductance Decay

Substrates

Si(100)

Keywords

Passivation

Notes

1279