Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
Type:
Journal
Info:
Journal of Applied Physics 124, 125309 (2018)
Date:
2018-09-27
Author Information
Name | Institution |
---|---|
D. Damianos | Grenoble Alps University (UGA) |
G. Vitrant | Grenoble Alps University (UGA) |
A. Kaminski-Cachopo | Grenoble Alps University (UGA) |
D. Blanc-Pelissier | Lyon Nanotechnology Institute (INL) |
G. Ghibaudo | Lyon Nanotechnology Institute (INL) |
M. Lei | FemtoMetrix |
J. Changala | FemtoMetrix |
A. Bouchard | Grenoble Alps University (UGA) |
X. Mescot | Grenoble Alps University (UGA) |
M. Gri | Grenoble Alps University (UGA) |
Sorin Cristoloveanu | Grenoble Alps University (UGA) |
I. Ionica | Grenoble Alps University (UGA) |
Films
Plasma Al2O3
Thermal Al2O3
Film/Plasma Properties
Characteristic: Passivation
Analysis: SHG, Second Harmonic Generation
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge
Analysis: Microwave Photoconductance Decay
Characteristic: Interface Trap Density
Analysis: Microwave Photoconductance Decay
Characteristic: Minority Carrier Lifetime
Analysis: Microwave Photoconductance Decay
Substrates
Si(100) |
Notes
1279 |