Publication Information

Title: Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance

Type: Journal

Info: ACS Appl. Mater. Interfaces, 2016, 8 (20), pp 13140-13149

Date: 2016-04-20

DOI: http://dx.doi.org/10.1021/acsami.6b03029

Author Information

Name

Institution

Stanford University

Stanford University

Tyndall National Institute, University College Cork

Stanford University

Stanford University

Films

Deposition Temperature = 200C

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Silicon

Keywords

Notes

1157



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