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Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
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Publication Information
Title:
Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current
Type:
Journal
Info:
Microelectronics Reliability Volume 63, 2016, Pages 52 - 55
Date:
2016-05-24
Author Information
| Name | Institution |
|---|---|
| J. Chen | Tokyo Institute of Technology |
| H. Wakabayashi | Tokyo Institute of Technology |
| K. Tsutsui | Tokyo Institute of Technology |
| H. Iwai | Tokyo Institute of Technology |
| K. Kakushima | Tokyo Institute of Technology |
Films
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| 831 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
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| Mauritius C. M. (Richard) van de Sanden |
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