Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current

Type:
Journal
Info:
Microelectronics Reliability Volume 63, 2016, Pages 52 - 55
Date:
2016-05-24
DOI:
http://dx.doi.org/10.1016/j.microrel.2016.05.014

Author Information

Name Institution
J. ChenTokyo Institute of Technology
H. WakabayashiTokyo Institute of Technology
K. TsutsuiTokyo Institute of Technology
H. IwaiTokyo Institute of Technology
K. KakushimaTokyo Institute of Technology

Films

Plasma SiO2

Hardware used: Unknown
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Keywords

Notes

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