2021 Year in Review
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272 Precursors and Plasma Gases
77 Deposition Hardwares
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Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition
Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition
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Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current
Type:
Journal
Info:
Microelectronics Reliability Volume 63, 2016, Pages 52 - 55
Date:
2016-05-24
Author Information
| Name | Institution |
|---|---|
| J. Chen | Tokyo Institute of Technology |
| H. Wakabayashi | Tokyo Institute of Technology |
| K. Tsutsui | Tokyo Institute of Technology |
| H. Iwai | Tokyo Institute of Technology |
| K. Kakushima | Tokyo Institute of Technology |
Films
Film/Plasma Properties
Substrates
Keywords
Notes
| 831 |