Title: Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current
Type: Journal
Info: Microelectronics Reliability Volume 63, 2016, Pages 52 - 55
Date: 2016-05-24
DOI: http://dx.doi.org/10.1016/j.microrel.2016.05.014
Name
Institution
Tokyo Institute of Technology
Tokyo Institute of Technology
Tokyo Institute of Technology
Tokyo Institute of Technology
Tokyo Institute of Technology
Characteristic
Analysis
Diagnostic
831
© 2014-2018 plasma-ald.com