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Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers
In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
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Publication Information
Title:
Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current
Type:
Journal
Info:
Microelectronics Reliability Volume 63, 2016, Pages 52 - 55
Date:
2016-05-24
Author Information
| Name | Institution |
|---|---|
| J. Chen | Tokyo Institute of Technology |
| H. Wakabayashi | Tokyo Institute of Technology |
| K. Tsutsui | Tokyo Institute of Technology |
| H. Iwai | Tokyo Institute of Technology |
| K. Kakushima | Tokyo Institute of Technology |
Films
Film/Plasma Properties
Substrates
Keywords
Notes
| 831 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |