Publication Information

Title:
Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current
Type:
Journal
Info:
Microelectronics Reliability Volume 63, 2016, Pages 52 - 55
Date:
2016-05-24

Author Information

Name Institution
J. ChenTokyo Institute of Technology
H. WakabayashiTokyo Institute of Technology
K. TsutsuiTokyo Institute of Technology
H. IwaiTokyo Institute of Technology
K. KakushimaTokyo Institute of Technology

Films

Plasma SiO2


Film/Plasma Properties

Substrates

Keywords

Notes

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