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Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
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Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current
Type:
Journal
Info:
Microelectronics Reliability Volume 63, 2016, Pages 52 - 55
Date:
2016-05-24
Author Information
| Name | Institution |
|---|---|
| J. Chen | Tokyo Institute of Technology |
| H. Wakabayashi | Tokyo Institute of Technology |
| K. Tsutsui | Tokyo Institute of Technology |
| H. Iwai | Tokyo Institute of Technology |
| K. Kakushima | Tokyo Institute of Technology |
Films
Film/Plasma Properties
Substrates
Keywords
Notes
| 831 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |