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Publication Information

Title: Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current

Type: Journal

Info: Microelectronics Reliability Volume 63, 2016, Pages 52 - 55

Date: 2016-05-24

DOI: http://dx.doi.org/10.1016/j.microrel.2016.05.014

Author Information

Name

Institution

Tokyo Institute of Technology

Tokyo Institute of Technology

Tokyo Institute of Technology

Tokyo Institute of Technology

Tokyo Institute of Technology

Films

Plasma SiO2 using Unknown

Deposition Temperature Range N/A

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

831


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