Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

Type:
Journal
Info:
Applied Physics Letters 109, 091103 (2016)
Date:
2016-08-18
DOI:
http://dx.doi.org/10.1063/1.4961939

Author Information

Name Institution
Chung-Yi LinNational Taiwan University
Chih-Hsiung HuangNational Taiwan University
Shih-Hsien HuangNational Taiwan University
Chih-Chiang ChangNational Taiwan University
Chee Wee LiuNational Taiwan University
Yi-Chiau HuangApplied Materials
Hua ChungApplied Materials
Chorng-Ping ChangApplied Materials

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma SiO2

Hardware used: Unknown
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Substrates

Notes

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