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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 2, PP. 184-187, 2018
Date:
2017-12-21
Author Information
| Name | Institution |
|---|---|
| Wenjun Li | University of Notre Dame |
| Matt D. Brubaker | National Institute of Standards and Technology |
| Bryan T. Spann | National Institute of Standards and Technology |
| Kris A. Bertness | National Institute of Standards and Technology |
| Patrick Fay | University of Notre Dame |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: -
Substrates
| Silicon |
Notes
| 1082 |