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Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
Texture of atomic layer deposited ruthenium
Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 2, PP. 184-187, 2018
Date:
2017-12-21
Author Information
| Name | Institution |
|---|---|
| Wenjun Li | University of Notre Dame |
| Matt D. Brubaker | National Institute of Standards and Technology |
| Bryan T. Spann | National Institute of Standards and Technology |
| Kris A. Bertness | National Institute of Standards and Technology |
| Patrick Fay | University of Notre Dame |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: -
Substrates
| Silicon |
Keywords
Notes
| 1082 |