GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 2, PP. 184-187, 2018
Date:
2017-12-21
DOI:
http://dx.doi.org/10.1109/LED.2017.2785785

Author Information

Name Institution
Wenjun LiUniversity of Notre Dame
Matt D. BrubakerNational Institute of Standards and Technology
Bryan T. SpannNational Institute of Standards and Technology
Kris A. BertnessNational Institute of Standards and Technology
Patrick FayUniversity of Notre Dame

Films

Plasma SiO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Substrates

Silicon

Keywords

Notes

1082