About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope

Type:

Journal

Info:

IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 2, PP. 184-187, 2018

Date:

2017-12-21

DOI:

http://dx.doi.org/10.1109/LED.2017.2785785

Author Information

Name	Institution
Wenjun Li	University of Notre Dame
Matt D. Brubaker	National Institute of Standards and Technology
Bryan T. Spann	National Institute of Standards and Technology
Kris A. Bertness	National Institute of Standards and Technology
Patrick Fay	University of Notre Dame

Films

Plasma SiO₂

Hardware used: Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness

Analysis: -

Diagnostic: -

Substrates

Silicon

Notes

1082