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GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope

Type:

Journal

Info:

IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 2, PP. 184-187, 2018

Date:

2017-12-21

DOI:

http://dx.doi.org/10.1109/LED.2017.2785785

Author Information

Name	Institution
Wenjun Li	University of Notre Dame
Matt D. Brubaker	National Institute of Standards and Technology
Bryan T. Spann	National Institute of Standards and Technology
Kris A. Bertness	National Institute of Standards and Technology
Patrick Fay	University of Notre Dame

Hardware used: Unknown

Deposition Temperature Range N/A

Characteristic: Thickness

Analysis: -

Diagnostic: -

Silicon

1082