GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 2, PP. 184-187, 2018
Date:
2017-12-21
Author Information
| Name | Institution |
|---|---|
| Wenjun Li | University of Notre Dame |
| Matt D. Brubaker | National Institute of Standards and Technology |
| Bryan T. Spann | National Institute of Standards and Technology |
| Kris A. Bertness | National Institute of Standards and Technology |
| Patrick Fay | University of Notre Dame |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: -
Substrates
| Silicon |
Notes
| 1082 |