
Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
Type:
Journal
Info:
Journal of Vacuum Science & Technology B 35, 012202 (2017)
Date:
2017-01-05
Author Information
Name | Institution |
---|---|
Shariq Siddiqui | Global Foundries |
Min Dai | Global Foundries |
Rainer Loesing | Global Foundries |
Erdem Kaltalioglu | Global Foundries |
Rajan Pandey | Global Foundries |
Rajesh Sathiyanarayanan | IBM |
Sandip De | EPFL STI IMX COSMO |
Srini Raghavan | University of Arizona |
Harold Parks | University of Arizona |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
Notes
992 |