Publication Information

Title:
Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
Type:
Journal
Info:
Journal of Vacuum Science & Technology B 35, 012202 (2017)
Date:
2017-01-05

Author Information

Name Institution
Shariq SiddiquiGlobal Foundries
Min DaiGlobal Foundries
Rainer LoesingGlobal Foundries
Erdem KaltaliogluGlobal Foundries
Rajan PandeyGlobal Foundries
Rajesh SathiyanarayananIBM
Sandip DeEPFL STI IMX COSMO
Srini RaghavanUniversity of Arizona
Harold ParksUniversity of Arizona

Films

Plasma SiO2

Hardware used: Unknown


Plasma SiON

Hardware used: Unknown


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Keywords

Notes

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