Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices

Type:
Journal
Info:
Journal of Vacuum Science & Technology B 35, 012202 (2017)
Date:
2017-01-05
DOI:
http://dx.doi.org/10.1116/1.4974250

Author Information

Name Institution
Shariq SiddiquiGlobal Foundries
Min DaiGlobal Foundries
Rainer LoesingGlobal Foundries
Erdem KaltaliogluGlobal Foundries
Rajan PandeyGlobal Foundries
Rajesh SathiyanarayananIBM
Sandip DeEPFL STI IMX COSMO
Srini RaghavanUniversity of Arizona
Harold ParksUniversity of Arizona

Films

Plasma SiO2

Hardware used: Unknown
Deposition Temperature = 400C

Plasma SiON

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Notes

992