About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices

Type:
Journal
Info:
Journal of Vacuum Science & Technology B 35, 012202 (2017)
Date:
2017-01-05

Author Information

Name Institution
Shariq SiddiquiGlobal Foundries
Min DaiGlobal Foundries
Rainer LoesingGlobal Foundries
Erdem KaltaliogluGlobal Foundries
Rajan PandeyGlobal Foundries
Rajesh SathiyanarayananIBM
Sandip DeEPFL STI IMX COSMO
Srini RaghavanUniversity of Arizona
Harold ParksUniversity of Arizona

Films

Plasma SiO2

Hardware used: Unknown


Plasma SiON

Hardware used: Unknown


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Notes

992