Surface oxidation model in plasma enhanced atomic layer deposition for silicon oxide films including various aminosilane precursors

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 020920 (2019)
Date:
2019-01-17
DOI:
http://dx.doi.org/10.1116/1.5078537

Author Information

Name Institution
Kosuke YamamotoTokyo Electron Technology Solutions, Ltd.
Ayuta SuzukiTokyo Electron Technology Solutions, Ltd.
Munehito KagayaTokyo Electron Technology Solutions, Ltd.
Masaaki MatsukumaTokyo Electron Technology Solutions, Ltd.
Tsuyoshi MoriyaTokyo Electron Technology Solutions, Ltd.

Films

Plasma SiO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

Numerical modeling work with O2 plasma and aminosilanes.
1268