Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

Type:
Journal
Info:
J. Vac. Sci. Technol. A 32(3), May/Jun 2014
Date:
2014-04-02
DOI:
http://dx.doi.org/10.1116/1.4871455

Author Information

Name Institution
Ki-Moon JeonKorea Research Institute of Standards and Science (KRISS)

Films

Plasma SiO2

Hardware used: ForALL OZONE
Triisopropylsilane, TIPS
CAS#: 6485-79-6
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 50C

Film/Plasma Properties

Substrates

Notes

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