Publication Information

Title: Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

Type: Journal

Info: J. Vac. Sci. Technol. A 32(3), May/Jun 2014

Date: 2014-04-02

DOI: http://dx.doi.org/10.1116/1.4871455

Author Information

Name

Institution

Korea Research Institute of Standards and Science (KRISS)

Films

Plasma SiO2 using ForALL OZONE

Deposition Temperature = 50C

6485-79-6

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

221



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