Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors

Type:
Journal
Info:
Superlattices and Microstructures 125 (2019) 281-286
Date:
2018-11-19
DOI:
https://doi.org/10.1016/j.spmi.2018.11.013

Author Information

Name Institution
Wen ZhouChinese Academy of Sciences
Li ZhengChinese Academy of Sciences
Xinhong ChengChinese Academy of Sciences
Wenjia ZhouShanghaiTech University
Peiyi YeUniversity of California - Los Angeles (UCLA)
Lingyan ShenChinese Academy of Sciences
Dongliang ZhangChinese Academy of Sciences
Ziyue GuChinese Academy of Sciences
Yuehui YuChinese Academy of Sciences

Films

Plasma SiO2

Hardware used: Unknown
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Optical Absorption
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Si(100)

Notes

1613