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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Internal Photoemission Spectroscopy Measurements of the Energy Barrier Heights between ALD SiO2 and Ta-Based Amorphous Metals

Type:
Conference Proceedings
Info:
ECS Transactions, 85 (13) 729 - 734
Date:
2018-06-01
DOI:
http://dx.doi.org/10.1149/08513.0729ecst

Author Information

Name Institution
Melanie A. JenkinsOregon State University
Tyler KlarrOregon State University
John M. McGloneOregon State University
John F. WagerOregon State University
John F. Conley, Jr.Oregon State University

Films

Plasma SiO2

Hardware used: Picosun R200
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Barrier Height
Analysis: IPS, Internal Photoemission Spectroscopy
Diagnostic: -

Substrates

TaN

Notes

1424