Publication Information

Title: Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor

Type: Journal

Info: Journal of Materials Science, v. 51, n. 11, p. 5082--5091 (2016)

Date: 2016-02-03

DOI: http://dx.doi.org/10.1007/s10853-016-9811-0

Author Information

Name

Institution

Yonsei University

Stanford University

Yonsei University

Yonsei University

Air Liquide

Yonsei University

Yonsei University

Incheon National University

Yonsei University

Films

Deposition Temperature Range N/A

27804-64-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

Unknown

Unknown

Dielectric Constant, Permittivity

Unknown

Unknown

Leakage Current

Unknown

Unknown

Transistor Characteristics

Unknown

Unknown

Substrates

Silicon

Keywords

Notes

772



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