Title: Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
Type: Journal
Info: Journal of Materials Science, v. 51, n. 11, p. 5082--5091 (2016)
Date: 2016-02-03
DOI: http://dx.doi.org/10.1007/s10853-016-9811-0
Name
Institution
Yonsei University
Stanford University
Yonsei University
Yonsei University
Air Liquide
Yonsei University
Yonsei University
Incheon National University
Yonsei University
Characteristic
Analysis
Diagnostic
Chemical Composition, Impurities
Unknown
-
Dielectric Constant, Permittivity
Unknown
-
Leakage Current
Unknown
-
Transistor Characteristics
Unknown
-
Silicon
772
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