Publication Information

Title: Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor

Type: Journal

Info: Journal of Materials Science, v. 51, n. 11, p. 5082--5091 (2016)

Date: 2016-02-03

DOI: http://dx.doi.org/10.1007/s10853-016-9811-0

Author Information

Name

Institution

Hanearl Jung

Yonsei University

Woo-Hee Kim

Stanford University

Il-Kwon Oh

Yonsei University

Chang Wan Lee

Yonsei University

Clement Lansalot-Matras

Air Liquide

Su Jeong Lee

Yonsei University

Jae Min Myoung

Yonsei University

Han-Bo-Ram Lee

Incheon National University

Hyungjun Kim

Yonsei University

Films

Plasma SiO2 using NCD Technology Lucida MP-100

Deposition Temperature Range N/A

Bis(diethylamino)silane, BDEAS, SAM-24, (Et2N)2SiH2

27804-64-4

Where to buy precursor

O2, Oxygen

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

Unknown

-

Dielectric Constant, Permittivity

Unknown

-

Leakage Current

Unknown

-

Transistor Characteristics

Unknown

-

Substrates

Silicon

Keywords

Notes

772


Mark Sowa

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