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Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor

Type:
Journal
Info:
Journal of Materials Science, v. 51, n. 11, p. 5082--5091 (2016)
Date:
2016-02-03
DOI:
http://dx.doi.org/10.1007/s10853-016-9811-0

Author Information

Name Institution
Hanearl JungYonsei University
Woo-Hee KimStanford University
Il-Kwon OhYonsei University
Chang Wan LeeYonsei University
Clement Lansalot-MatrasAir Liquide
Su Jeong LeeYonsei University
Jae Min MyoungYonsei University
Han-Bo-Ram LeeIncheon National University
Hyungjun KimYonsei University

Films

Plasma SiO2

Hardware used: NCD Technology Lucida MP-100
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: -
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: -
Diagnostic: -

Characteristic: Leakage Current
Analysis: -
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: -
Diagnostic: -

Substrates

Silicon

Notes

772