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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
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  • Surface cleaning
  • Surface modification

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A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD

Type:
Journal
Info:
Plasma Proc Polymers
Date:
2018-02-25
DOI:
http://dx.doi.org/10.1002/ppap.201700209

Author Information

Name Institution
Maximilian GebhardRuhr-University Bochum
Felix MitschkerRuhr-University Bochum
Christian HoppeUniversity of Paderborn
Morteza AghaeeEindhoven University of Technology
Detlef RogallaRuhr-University Bochum
Mariadriana CreatoreEindhoven University of Technology
G. GrundmeierUniversity of Paderborn
Peter AwakowiczRuhr-University Bochum
Anjana DeviRuhr-University Bochum

Films

Plasma SiO2

Hardware used: Custom
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 60C

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 60C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Oxygen Transmission Rate (OTR)
Analysis: -
Diagnostic: -

Characteristic: Damage, Defects
Analysis: -
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Porosity
Analysis: -
Diagnostic: -

Substrates

Si(100)
PET, Polyethylene Terephthalate

Notes

1108